microwave corporation 8 - 306 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 hmc469ms8g sige hbt dual channel gain block mmic amplifier, dc - 5.0 ghz v00.0504 general description functional diagram the hmc469ms8g is a sige hbt dual channel gain block mmic smt ampli er covering dc to 5 ghz. this versatile product contains two gain blocks, packaged in a single 8 lead plastic msop, for use as either separate cascadable 50 ohm rf/if gain stages, lo or pa drivers or with both ampli ers combined utilizing external 90?hybrids to create a high linearity driver ampli er. each ampli er in the hmc469ms8g offers 15 db of gain, +18dbm p1db with a +34 dbm output ip3 at 850 mhz while requiring only 75 ma from a single positive supply. the combined dual ampli er circuit delivers up to +20 dbm p1db with +35dbm oip3 for speci c application bands through 4 ghz. +18 dbm p1db output power 15 db gain output ip3: +34 dbm supply (vs): +5v to +12v 14.9 mm 2 ultra small 8 lead msop typical applications the hmc469ms8g is a dual rf/if gain block & lo or pa driver: ?cellular / pcs / 3g ?fixed wireless & wlan ?catv, cable modem & dbs ?microwave radio & test equipment electrical speci cations, vs= 8.0 v, rbias= 51 ohm, t a = +25?c note: data taken with broadband bias tee on device output. all speci cations refer to a single ampli er. parameter min. typ. max. units gain dc - 1.0 ghz 1.0 - 2.0 ghz 2.0 - 3.0 ghz 3.0 - 4.0 ghz 4.0 - 5.0 ghz 12.5 11 10 9 7.5 15 13 12 11 9.5 db db db db db gain variation over temperature dc - 5.0 ghz 0.008 0.012 db/ ? input return loss dc - 1.0 ghz 1.0 - 4.0 ghz 4.0 - 5.0 ghz 12 10 8 db db db output return loss dc - 1.0 ghz 1.0 - 2.0 ghz 2.0 - 4.0 ghz 4.0 - 5.0 ghz 14 10 8 6 db db db db reverse isolation dc - 5.0 ghz 18 db output power for 1 db compression (p1db) 0.5 - 1.0 ghz 1.0 - 2.0 ghz 2.0 - 3.0 ghz 3.0 - 4.0 ghz 4.0 - 5.0 ghz 15 13 11 9.5 8 18 16 14 12.5 11 dbm dbm dbm dbm output third order intercept (ip3) (pout= 0 dbm per tone, 1 mhz spacing) 0.5 - 1.0 ghz 1.0 - 2.5 ghz 2.5 - 4.0 ghz 4.0 - 5.0 ghz 34 30 25 23 dbm dbm dbm dbm noise figure dc - 3.0 ghz 3.0 - 5.0 ghz 4.0 5.0 db db supply current (icq) 75 ma features
microwave corporation 8 - 307 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 hmc469ms8g output return loss vs. temperature v00.0504 broadband gain & return loss gain vs. temperature reverse isolation vs. temperature input return loss vs. temperature sige hbt dual channel gain block mmic amplifier, dc - 5.0 ghz noise figure vs. temperature -25 -20 -15 -10 -5 0 5 10 15 20 12345678 s21 s11 s22 response (db) frequency (ghz) -20 -15 -10 -5 0 0123456 +25c +85c -40c input return loss (db) frequency (ghz) -20 -15 -10 -5 0 0123456 +25c +85c -40c output return loss (db) frequency (ghz) 0 1 2 3 4 5 6 7 8 9 10 0123456 +25c +85c -40c noise figure (db) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 123456 +25c +85c -40c gain (db) frequency (ghz) -25 -20 -15 -10 -5 0 123456 +25c +85c -40c reverse isolation (db) frequency (ghz) data shown is of a single ampli er.
microwave corporation 8 - 308 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 hmc469ms8g v00.0504 sige hbt dual channel gain block mmic amplifier, dc - 5.0 ghz gain, power & oip3 vs. supply voltage for constant icc= 75 ma @ 850 mhz p1db vs. temperature psat vs. temperature output ip3 vs. temperature vcc vs. icc over temperature for fixed vs= 8v, r bias = 51 ohms 66 68 70 72 74 76 78 80 82 3.8 3.9 4 4.1 4.2 4.3 4.4 4.5 4.6 icc (ma) vcc (vdc) +85c +25c -40c 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 56789101112 gain p1db psat oip3 gain (db), p1db (dbm), psat (dbm), oip3 (dbm) vs (vdc) 0 2 4 6 8 10 12 14 16 18 20 22 0123456 +25c +85c -40c p1db (dbm) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 22 0123456 +25c +85c -40c psat (dbm) frequency (ghz) 15 20 25 30 35 40 0123456 +25c +85c -40c oip3 (dbm) frequency (ghz) data shown is of a single ampli er. cross channel isolation -45 -40 -35 -30 -25 -20 -15 -10 -5 0 12345678 input1-output2 input2-output1 path isolation (db) frequency (ghz)
microwave corporation 8 - 309 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 10 12 14 16 18 20 22 1.4 1.6 1.8 2 2.2 2.4 2.6 +25c +85c -40c psat (dbm) frequency (ghz) -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 0.5 1 1.5 2 2.5 3 +25c +85c -40c gain (db) frequency (ghz) hmc469ms8g v00.0504 sige hbt dual channel gain block mmic amplifier, dc - 5.0 ghz gain* -40 -35 -30 -25 -20 -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 reverse isolation (db) frequency (ghz) rs isatin 20 25 30 35 40 1.4 1.6 1.8 2 2.2 2.4 2.6 +25c +85c -40c oip3 (dbm) frequency (ghz) ott ip3 10 12 14 16 18 20 22 1.4 1.6 1.8 2 2.2 2.4 2.6 +25c +85c -40c p1db (dbm) frequency (ghz) ott p1db ott psat -40 -35 -30 -25 -20 -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 input return loss output return loss return loss (db) frequency (ghz) int ott rtn lss * measurements shown are of both channels with 1.5 - 2.5 ghz 90?splitter/combiners on input & output (see application circuit for balanced operation).
microwave corporation 8 - 310 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 hmc469ms8g v00.0504 sige hbt dual channel gain block mmic amplifier, dc - 5.0 ghz outline drawing absolute maximum ratings collector bias voltage (vcc) +6.0 vdc collector bias current (icc) 100 ma rf input power (rfin)(vcc = +4.2 vdc) +17 dbm junction temperature 150 ? continuous pdiss (t = 85 ?) (derate 29.58 mw/? above 85 ?) 1.92 w thermal resistance (junction to ground paddle) 33.8 ?/w storage temperature -65 to +150 ? operating temperature -40 to +85 ? notes: 1. package body material: low stress injection molded plastic silica and silicon impregnated. 2. lead and ground paddle material: copper alloy 3. lead and ground paddle plating: sn/pb solder 4. dimensions are in inches [millimeters]. 5. dimension does not include moldflash of 0.15mm per side. 6. dimension does not include moldflash of 0.25mm per side. 7. all ground leads and ground paddle must be soldered to pcb rf ground.
microwave corporation 8 - 311 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 hmc469ms8g v00.0504 sige hbt dual channel gain block mmic amplifier, dc - 5.0 ghz pin descriptions pin number function description interface schematic 1 rfin1 this pin is dc coupled. an off chip dc blocking capacitor is required. 8 rfout1 rf output and dc bias (vcc1) for the output stage. 2, 3, 6, 7 n/c no connection. these pins may be connected to rf ground. performance will not be affected. 4 rfin2 this pin is dc coupled. an off chip dc blocking capacitor is required. 5 rfout2 rf output and dc bias (vcc2) for the output stage. ground paddle gnd ground paddle must be connected to rf/dc ground.
microwave corporation 8 - 312 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 application circuit for balanced operation recommended component values for key application frequencies component frequency (mhz) 50 900 1900 2200 2400 3500 5000 l1, l2 270 nh 56 nh 18 nh 18 nh 15 nh 8.2 nh 6.8 nh c4, c5, c9, c10 0.01 ? 100 pf 100 pf 100 pf 100 pf 100 pf 100 pf note: 1. external blocking capacitors are required on rfin and rfout. 2. r bias provides dc bias stability over temperature. recommended bias resistor values for icc= 75 ma, rbias= (vs - vcc) / icc supply voltage (vs) 5v 6v 8v 10v 12v r bias v alue 13 ? 27 ? 51 ? 82 ? 110 ? r bias p ower r ating 1/8 w 1/4 w 1/2 w 1/2 w 1 w hmc469ms8g v00.0504 sige hbt dual channel gain block mmic amplifier, dc - 5.0 ghz
microwave corporation 8 - 313 for price, delivery, and to place orders, please contact hittite microwave corporation: 12 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order online at www.hittite.com amplifiers - smt 8 hmc469ms8g v00.0504 sige hbt dual channel gain block mmic amplifier, dc - 5.0 ghz evaluation pcb the circuit board used in the nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. a suf cient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 109164* item description j1 - j4 pc mount sma connector j5 - j8 dc pins l1, l2 inductor, 0402 pkg. c1, c8 2.2 ? capacitor, tantalum c2, c7 1000 pf capacitor, 0402 pkg. c3, c6 100 pf capacitor, 0402 pkg. c4, c5, c9, c10 capacitor, 0402 pkg. r1, r2 resistor, 2010 pkg. u1 hmc469ms8g pcb** 109162 evaluation pcb ** circuit board material: rogers 4350 * reference this number when ordering complete evaluation pcb.
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